GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP TGA The DNP aluminum laminated film

The DNP aluminum laminated film (91 um) is used as a casing material for the polymer Li-Ion battery

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8682 g/mol

available at extra cost

0 g /m^2 ± 0

GaN Single Crystal Substrate,N-type, (10-10), 5 x10 x 0.3 mm , 1SP TGA The DNP aluminum laminated filmGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: M axis (10 10) + 1. 0 o Type: N type(undoped) Nominal Thickness 300+ 25 microns Dimension: 5 mm x 10 mm +