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Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.005 ohm.cm Battery R&D Resistivity: >106 ohm-cm
Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.005 ohm.cm Battery R&D Resistivity: >106 ohm-cm
$28.69
Description
Resistivity: >106 ohm-cm
MTI supplies high quality hot pressed SiC cutting blades with 6" diameter x 0
88 Gauge (MPa) Protection Cover
Center to Center distance of the two sides is 20mm
Gauge Displayed Pressure Value (Bar) for 87 mm Dia
Ge Substrate: (100) 5x5 x 0.5 mm , 1SP, P type Ga doped,R:0.0007-0.005 ohm.cm Battery R&D Resistivity: >106 ohm-cmGe Wafer Specification Growing Method: CZ Wafer Size: 5 x 5 x0. 5 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga doped Conductor type: P type Resistivity: 0. 0007 0. 005 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other
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