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GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp Thin-Film/Flexible Battery Mobility: 140 cm^2/Vs
GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp Thin-Film/Flexible Battery Mobility: 140 cm^2/Vs
$103.44
Description
Mobility: 140 cm^2/Vs
4 @ 300K at A axis
< 5 o +/- 1o
Doping: Ga doped
Cathode Tab: 30mm x 8mm
GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.3mm, 2sp Thin-Film/Flexible Battery Mobility: 140 cm^2/VsGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 10 x 10 x 0. 3 0. 35 mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Carrier Concentration:(2. 49 3. 27)x10^18 c. c Mobility: 1630 1870cm^2 V. S Resistivity :( 1. 17 1. 4)x10^ 3 ohm. cm Ra(Average Roughness) : < 0. 4 nm Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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