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LaAlO3,(100) ori 10x10x 0.5mm substrate , 1 SP - LAOa101005S1 High-Throughput Coating Suggested Sealing Method: (parameter below
LaAlO3,(100) ori 10x10x 0.5mm substrate , 1 SP - LAOa101005S1 High-Throughput Coating Suggested Sealing Method: (parameter below
$56.82
Description
Suggested Sealing Method: (parameter below may vary from case to case)
Melting Point ~200-300 °C
Vanadium (3)
95 per box
Thermal Expansion: a a= 16
LaAlO3,(100) ori 10x10x 0.5mm substrate , 1 SP - LAOa101005S1 High-Throughput Coating Suggested Sealing Method: (parameter belowLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 10 x 10 x 0. 5 mm thickness + 0. 05 mm, Wafer Orientation: (100) + 0. 5
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