Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 1-10 ohm-cm Orientation 100 RT- 200°C: Max

RT- 200°C:  Max

Surface Roughness :   <15A

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Motor speed: 10 - 70 rpm programmable

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Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 1SP Resistivity : 1-10 ohm-cm Orientation 100 RT- 200°C: MaxGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Ga doped Conductor type: P type Resistivity: 1 10 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a