Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type ,As-doped, 1 side polished, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa50D05C Aluminum Oxide Substrates Al2O3 The crimper is driven by

The crimper is driven by compressed inert gas or air for various types of coin cells such as CR2016

Please click the picture below to choose one crucible boat:

(Please order separately under Personalization)

order MTI's press rolling machine here and 1

Resistivities (ohm-cm):                       0

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type ,As-doped, 1 side polished, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa50D05C Aluminum Oxide Substrates Al2O3 The crimper is driven byThermal oxide Layer Research Grade, about 80 % useful area SiO2 layer on 2" Silicon wafer Oxide layer thickness: 300 nm ( 3000A) + 10% Refractive index: 1. 455 Silicon Wafer Specifications: Conductive type: N type As doped Resistivity: 0. 001 0. 005 ohm cm Size: 50. 8 diameter + 0. 5 mm x 0. 50 + 0. 025 mm Orientation: (100) + 1o Polish: one side polished Surface roughness, Ra: < 5A (RMS) Related Products Thin Films A Z Crystal wafer A Z Plasma