Si (100) 1" dia x 0.5mm, 1SP, P type B-doped, R:1-10 ohm-cm CeO2 Boiling Point: 2467°C
$33.75
Description
Boiling Point: 2467°C
Put liquid thicken agent into 4 and stir (better have vacuum mixing)
The milling machine must be placed on solid flat ground to avoid damage
14x10-6 c: 9
Polish: EPI polished by CMP technology with less sub-surface lattice damage
Si (100) 1" dia x 0.5mm, 1SP, P type B-doped, R:1-10 ohm-cm CeO2 Boiling Point: 2467°CSpecifications: Single crystal: Si Conductive type: P type, B doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 1" diameter x 0. 5 mm Orientation: (100) Polish: one side polished Surface roughness: < 5A RMS Related Products Other Crystal Wafer A Z Plasma Cleaner Wafer Containers Dicing Saw Film Coater
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