GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2US Cathode Monocrystalline Al2O3 Sapphire ( single

Monocrystalline Al2O3 Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films

Special Hydrogenated Nitrile (HNBR) compounds can improve resistance to direct ozone

MTI will replace the unsatisfied substrate which has no film grown and no damage free of charge until you are satisfied within 15 days after receiving it

Two-wave mixing coupling constant: 10 -40  cm-1 Absorption loss:

about 5 mm x 5 mm x 0

GaAs, Growing Method: VGF (111)B, Si-doped, 2" dia x 0.35mm, 2sp - GASicB50D035C2US Cathode Monocrystalline Al2O3 Sapphire ( singleGaAs single crystal wafer Growing Method: VGF Orientation: (111)B Primary Flat: EJ(0 11)+ 0. 5 deg; Secondary Flat: EJ( 211) Size: 2" dia x 0. 35mm Polishing: Two sides polished Doping: Si doped Conductor type: S C N Resistivity:(1. 5 4. 1)E 3 ohm. cm Carrier Concentration: (0. 6 2. 4)x10^18 c. c Mobility: 1750 2450 cm^2 V. S EPD: N A Ra(Average Roughness) : < 0. 4 nm Note: EPI ready wafers