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GaAs Wafer - Growing Method: VGF (100) P type Zn doped , 3"x0.625 mm, 1sp Ceramic & Glass Substrate A-Z The pressing die cannot be
GaAs Wafer - Growing Method: VGF (100) P type Zn doped , 3"x0.625 mm, 1sp Ceramic & Glass Substrate A-Z The pressing die cannot be
$228.85
Description
The pressing die cannot be used for pressing powder with particle size < 30 mircon
Two 18S PTFE Connecting Tubes (1
Install exhaust valve (outlet) on the other end of tube flange
Single crystal copper metallic substrate
94mm Flatness = 0
GaAs Wafer - Growing Method: VGF (100) P type Zn doped , 3"x0.625 mm, 1sp Ceramic & Glass Substrate A-Z The pressing die cannot beGaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 3" dia x 0. 625 mm Polishing: one side polished Doping: Zn doped Conductor type: S C P Carrier Concentration: (0. 74 3. 60) x 10^19 cm^3 Mobility: 59 88 cm^2 V. S EPD: < 5000 cm^2 resistivity: (2. 92 9. 70)x10^ 3 ohm. cm Note: EPI ready wafers Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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