InP, Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1sp Se Activation Energy 0

Activation Energy  0

Please consider using an electronic motor grinder to save lab cost

Orientation:              <110> +/- 0

The rotary drum is made of SS304

Ar environment compatible

InP, Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1sp Se Activation Energy 0InP single crystal wafer Orientation: (100)+ 0. 5 degree Primary Flat: US(01 1)+ 0. 5 degree Secondary Flat: US(011) Size: 3" diameter x 0. 625 mm Growing Method: VGF Doping: Zn doped Conducting type: S C Polish: one side polished Resistivity: (4. 19 4. 73)E 2 ohm. cm Mobility: 72 74 cmE2 V. S EPD: <5000 cmE2Carrier Concerntration: (1. 79 2. 07)E18 cmE 3 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing