Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials Ingestion-build-54484 Results of interlaboratory tests

Results of interlaboratory tests

It is not intended to test equipment which forms part of the main structure

fluid resistance

Large or industrial grade machine manufacturers

mapping the legal and the technical concepts

Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials Ingestion-build-54484 Results of interlaboratory tests1 Scope This International Standard specifies a secondary ion mass spectrometric method for the determination of boron atomic concentration in single crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1 1016 atoms cm3 to 1 1020 atoms cm3.