Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm CdTe Doped Zn (CZT) 5V) due to the passivation

5V) due to the passivation of cladding by electrolyte component (especially LiPF6 based electrolyte system) to form a layer of AlF3

Orientaion: M plane <10-10>orn +/-0

For more information on this Al-Clad coin cell case

Polish:             Fine ground

8 separated split coin cells can be assembled independently and tested parallelly for high-throughput R&D battery material testing and screening

Ge Single Crystal Substrate, N-type Sb-doped (100) 10x10x0.45mm 1sp, R<0.009ohm.cm CdTe Doped Zn (CZT) 5V) due to the passivationGe Wafer Specification Growing Method: CZ Wafer Size: 10 x 10 x0. 45 mm Surface Polishing: one side epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: <0. 009 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other Crystal