SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm) Accessories Surface finish: One side optical

Surface finish:  One side optical polished < 100A

If you feel the product conflict with your IP

Can run one test cycle to check capacity or thousands to test battery life

At the mean while

We found many domains or twin defect inside single-crystal similar to LaAlO3 which results in a crystal rocking curve as below

SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm) Accessories Surface finish: One side opticalSilicon Wafer Specifications: Conductive type: SiO2+Pt thin film on Si (B doped, (100)Ori.) substrate ,10x10x0. 5mm,1sp( SiO2=500nm,Pt=60nm) Resistivity: <0. 005 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 10x10 x 0. 5 mm Polish: one side polished Surface roughness: < 5A Related Products Thin Films A Z Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing