ITO Coated PEN Plastic Film, 0.125 Tx210Wx297L (mm),12 ohm/sq, ITO layer>180 nm - ITO-PEN-15K Diamond on Silicon wafer wafer InGaAs EPI on InP

wafer InGaAs EPI on InP (Semi-insulating)(100) by MOCVD deposition

Polished surface: one side polished

Please order a dressing  stone to sharpen the wire during cutting

Note: By using 24mm and 15mm die

SMA Female to Female Bulkhead Connector Adaptor is included (For MTI’s film deposition systems

ITO Coated PEN Plastic Film, 0.125 Tx210Wx297L (mm),12 ohm/sq, ITO layer>180 nm - ITO-PEN-15K Diamond on Silicon wafer wafer InGaAs EPI on InPIndium Tin Oxide (ITO) coated plastic film Plastic materials: PEN (DuPont Teijin Teonex ) film Q65HA Coating method: Magnetron sputtering Dimension: 210 mm width x 297 mm L x 0. 125 mm Thickness PEN layer=0. 125 mm, ITO layer>180 nm Resistivity: 12 ohm sq, the transparency is >=75% and haze is 3% PEN is with glass transition temperature (Tg) of 120 degree centigrade, 42 degree centigrade higher than that of PET films Surface Roughness( Ra): ~ 1 nm