GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut Ceramic Coatings and Adhesives Please clean the grinding ring

Please clean the grinding ring before each use

70 m3/h The rotation speed at 50 Hz 1500 RPM The rotation speed at 60 Hz 1800 RPM Switch Yes

L=L1+L2:=220+280=500mm

This wafer container is designed for 6" diameter wafers

Impurity:       MgO < 0

GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut Ceramic Coatings and Adhesives Please clean the grinding ringGaAs single crystal wafer Growing Method: LEC Orientation: (110) Size: 2" dia x 2. 8 mm Polishing: As Cut Doping: undoped Conductor type: Semi Insulating Resistivity: >1 x 107 Ohm. cm Mobility: 4500 cm 2 V. S Carrire Concentration: <1 x108 cm^ 3 EPD: < 5x104 cm 2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces