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GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp Aluminum Film Optional SS Jars
GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp Aluminum Film Optional SS Jars
$189.18
Description
Optional SS Jars
Orientation: R-plane (11-02) +/- 0
Sample Holder & Mini-vise
EQ-HC-BL-600 for BL-SS-600
Package: under 1000 class clean room in wafer container
GaAs VGF Grown(110) orientation, un-doped, Semi-Insulating, 3" dia x 0.5mm, 1sp Aluminum Film Optional SS JarsGaAs single crystal wafer Growing Method: VGF Orientation: (110) Primary Flat: EJ(1 10) + 0. 5 degree Secondary Flat: EJ (001) + 0. 5 degree Size: 3" dia x 0. 5mm Polishing: One side polished Doping: Un doped, Semi Insulating Conductor type: S I Carrier Concentration: N A Mobility: 4570 6190cm^2 V. S Resistivity : (0. 89 3. 8)x10^8ohm. cm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP
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