Home
»
»
GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp Anode 004mm) (Inside) (Melting Point: ~660ºC)
GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp Anode 004mm) (Inside) (Melting Point: ~660ºC)
$459.43
Description
004mm) (Inside) (Melting Point: ~660ºC)
Two electrode feed-throughs are inserted inside the vessel to measure battery properties
Compressed Gas and Force
The tube adaptor is made of high purity alumina fiber board and is designed for OTF-1200X Split Tube Furnace to accpet 2" OD processing tube
(Optional) The vacuum pump and fittings are not included
GaSb Wafer (111)-B, undoped,P-type 2"x0.5 mm ,2sp Anode 004mm) (Inside) (Melting Point: ~660ºC)Wafer Specifications:. Size: 2" diameter x 0. 5 mm, Orientation: (111) B Flats: SEMI PF <01 1>. SF<0 11> Dopping: undoped, Conducting type: P type. Polish: Two side EPI ready polished Resistivity: N A Mobility: 600 700cm^2 Vs Carrier concentration: (1 3)x10^17 ohm. cm EPD : <2000 cm^ 2 Packing: 1000 class clean room in a single wafer container Surface finish (RMS or Ra) : < 5A Dopant Type Carrier Concentration ( cm 3) Mobility ( cm2 V. Sec)
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
-B, undoped,P-type 2){kind=link}