Al2O3 - Sapphire Wafer, C-plane (0001), 10x10x0.25mm, 1SP ALC1010025S1 High-Throughput Coating a major advantage over other

a major advantage over other compressing jigs where the clamping force of the split cell weakens once the mechanical jack loses pressure

1 sides polished

Two pushing rods highly polished and perfectly fitted into die

Working Voltage 208 - 240V AC (single-phase)

2 side polished

Al2O3 - Sapphire Wafer, C-plane (0001), 10x10x0.25mm, 1SP ALC1010025S1 High-Throughput Coating a major advantage over otherFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 10 x 10 x 0. 25(+ 0. 05) mm thick Orientation: <0001> + 0. 5o Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A one side polished Package: Each wafer is packed in 1000 class clean room with 100 grade plastic