InP-VGF- (100) S doped, 10x10x0.5mm wafer, 2sp - IPSa101005S2US KH2PO4 5 mm at 45o ±
$113.85
Description
5 mm at 45o ± 5o
Please separate parts from the inside surface of the tube to avoid thermal shock
Size: 5mm x 5mm x 0
Coating speed: 12mm/s
Thickness: 2
InP-VGF- (100) S doped, 10x10x0.5mm wafer, 2sp - IPSa101005S2US KH2PO4 5 mm at 45o ±InP single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10 x 0. 5 mm Doping: S doped Conducting type: S C N Polish: one side polished Resistivity: (1. 8 2. 0)x10^ 3 ohm. cm Mobility: 1850 1870 cmE2 V. S EPD: <2000 cmE2 Carrier Concerntration: (1. 7 1. 9) x10^18 cm^3 Ra(Average Roughness) : < 0. 4 nm
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 S doped, 10x10x0.5mm wafer, 2sp - IPSa101005S2US KH2PO4 5 mm at 45o ±){kind=link}
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