LaAlO3, (100) Orn. 0.5" x 0.5mm wafer 2SP Graphite Plates Polishing: fine ground on both

Polishing: fine ground on both sides

5 thickness +/-0

Package:    Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container

EPD                                               <3000 cm^-2

Warning Attention: Improper use will cause all claims for liability and warranties to be forfeited

LaAlO3, (100) Orn. 0.5" x 0.5mm wafer 2SP Graphite Plates Polishing: fine ground on bothLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 0. 5" dia + 0. 5 mm x 0. 5 thickness + 0. 05 mm Wafer Orientation: (100)