HB00700 - SEMI HB7 - Test Method for Measurement of Waviness of Crystalline Sapphire Wafers by Using Optical Probes Revision:SEMI HB7-0615 - Current Similar requirements and options covering

Similar requirements and options covering load ports for wafers are covered in SEMI E15 (for 200 mm wafers and smaller) and in SEMI E15

org in November 2004

シリコンエピタキシャルウェーハの中には，エピタキシャル層の下に埋め込み層が形成されているものがある。 本仕様はそのような埋め込み層付きのエピタキシャルウェーハの特性について規定するものである。

SEMI M56-1018 (technical revision)

This edition was approved for publication by the global Audits and Reviews Subcommittee on December 16

HB00700 - SEMI HB7 - Test Method for Measurement of Waviness of Crystalline Sapphire Wafers by Using Optical Probes Revision:SEMI HB7-0615 - Current Similar requirements and options coveringThis Standard was technically approved by the HB LED Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on May 19, 2015. Available at www. semiviews. org and www. semi. org in June 2015. Crystalline sapphire wafers (CSW) are used as substrates for manufacturing compound semiconductor devices, in particular high brightness light emitting diodes (HB LED). In SEMI HB1 a multitude of