G02300 - SEMI G23 - 半導体パッケージの内部導体路のインダクタンスのための試験方法 StdPbc-0924 Structural defects formed in the

Structural defects formed in the bulk of a silicon wafer during its growth or induced by electronic device processing can affect the performance of the circuitry fabricated on that wafer

originally published in 1992

10-0600 (Reapproved 0124)

This Document can be used as a Guide for equipment manufacturers during the design and testing of their equipment and by those who either use or produce reticles and other EES items

The CIE XYZ color space is derived from the experimental results and it has been used to set color performance of displays in CIE xy or u’v’ chromaticity diagram without brightness

G02300 - SEMI G23 - 半導体パッケージの内部導体路のインダクタンスのための試験方法 StdPbc-0924 Structural defects formed in theglobal Assembly & Packaging Technical Committee201171global Audits and Reviews Subcommittee20118www. semiviews. org www. semi. org198019969 Referenced SEMI Standards None.