MF011000 - SEMI MF110 - Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique Revision:SEMI MF110-1107 (Reapproved 0718) - Superseded Vendor independence and openness are

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This Standard describes a specific device structure and behavior of a generic equipment networked sensor

but not limited to

SEMI M56-1018 (Reapproved 1023)

The actual size may be further restricted by an application document

MF011000 - SEMI MF110 - Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique Revision:SEMI MF110-1107 (Reapproved 0718) - Superseded Vendor independence and openness areThis Test Method covers a procedure suitable for interlaboratory comparisons of layer thickness. This Test Method is applicable for layers of any resistivity so long as the layer differs from the silicon substrate under it either in conductivity type or by at least one order of magnitude in resistivity. The method described is destructive in nature but is more widely applicable than the alternative infrared method, SEMI MF95. For layers with